Silver Iodide Induced Resistive Switching in CsPbI        <sub >3</sub>3        Perovskite‐Based Memory Device

Ge Shuaipeng; Huang Yunxia; Chen Xiaojuan; Zhang Xinran; Xiang Zhongcheng; Zhang Ruoxuan; Li Wenping; Cui Yimin

摘要

Abstract > Lead halide perovskites‐based memory devices have attracted considerable interest due to their unique current–voltage ( I–V ) hysteresis. Herein, all‐inorganic CsPbI <sub>3</sub> perovskite film surviving 30 d of air storage is prepared by using a poly‐vinylpyrrolidone‐assisted passivation method under fully open‐air condition. Afterwards, a memory device with a sandwich structure of Ag/CsPbI <sub>3</sub> /indium tin oxide is manufactured. From I–V characteristics of pristine device, a spontaneous reaction between the active Ag electrode and I ? ions under air exposure is suggested. Furthermore, complete degradation of Ag electrode and formation of AgI <sub>x</sub> are verified, which also accompanies with generation of more iodine vacancies (V <sub>I</sub> ) in perovskite film. The memory device with AgI <sub>x</sub> layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio (above 10 6 ), nonvolatile, reliable, and reproducible switching performance. Cell area and temperature dependent characteristics propose that the resistive switching is dominated by V <sub>I</sub> filament in low‐resistance state and thermally assisted hopping in high‐resistance state. This study provides a new insight to understand switching behavior from the way of electrode degradation and metal iodide formation in lead iodide perovskites‐based memory devices and also suggests a potential application for AgI <sub>x</sub> ‐induced resistive switching in CsPbI <sub>3</sub> ‐based memory device. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 铅卤化卤化纤维植物基于基于钙质的存储器件由于其独特的电流电压而引起了相当大的兴趣（ i-v </ i> ）滞后。在此，全无机CSPBI <sub> 3 </ sub> 通过在完全露天条件下使用聚乙烯基吡咯烷酮辅助钝化方法，制备30d空气储存的钙钛矿薄膜。然后，具有AG / CSPBI的三明治结构的存储器件 <sub> 3 </ sub> /氧化铟锡。制造氧化锡。从 i-v </ i> 原始装置的特性，活性Ag电极与I之间的自发反应？</ sup> 提出了空气暴露下的离子。此外，完全降解Ag电极和AGI的形成 <sub> x </ sub> </ i> 经过验证，也伴随着更多碘空缺的产生（v <sub> i </ sub> ）在Perovskite电影中。具有AGI的内存设备 <sub> x </ sub> </ i> 层显示双极电阻切换行为，超高开/关比（10以上10 6 </ sup> ），非易失性，可靠，可重复的切换性能。细胞面积和温度依赖性特性提出电阻切换由V主导 <sub> i </ sub> 在低电阻状态下的长丝和高阻状态的热辅助跳跃。本研究提供了从基于铅碘化碘化物钙质的存储器件中的电极降解和金属碘化物形成的方式了解开关行为的新洞察力，并且还表明AGI的潜在应用 <sub> x </ sub> </ i> - 在CSPBI中诱导电阻切换 <sub> 3 </ sub> 基于内存设备。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2019年第7期</span><b style="margin: 0 2px;">|</b><span>共9页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ge Shuaipeng&option=202" target="_blank" rel="nofollow">Ge Shuaipeng;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Huang Yunxia&option=202" target="_blank" rel="nofollow">Huang Yunxia;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Chen Xiaojuan&option=202" target="_blank" rel="nofollow">Chen Xiaojuan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Zhang Xinran&option=202" target="_blank" rel="nofollow">Zhang Xinran;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Xiang Zhongcheng&option=202" target="_blank" rel="nofollow">Xiang Zhongcheng;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Zhang Ruoxuan&option=202" target="_blank" rel="nofollow">Zhang Ruoxuan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Li Wenping&option=202" target="_blank" rel="nofollow">Li Wenping;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Cui Yimin&option=202" target="_blank" rel="nofollow">Cui Yimin;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> <p>Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationBeihang UniversityBeijing 100191 China;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=CsPbI 3&option=203" rel="nofollow">CsPbI 3;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=memory devices&option=203" rel="nofollow">memory devices;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=perovskites&option=203" rel="nofollow">perovskites;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=resistive switching&option=203" rel="nofollow">resistive switching;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=silver iodide&option=203" rel="nofollow">silver iodide;</a> </p> <div class="translation"> 机译：CSPBI 3;存储器件;钙钛矿;电阻切换;银碘化物; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" 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Silver Iodide Induced Resistive Switching in CsPbI 33 Perovskite‐Based Memory Device

摘要

Silver Iodide Induced Resistive Switching in CsPbI ₃3 Perovskite‐Based Memory Device