Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review

Tripathi Tripurari Sharan; Karppinen Maarit

摘要

Abstract >Semiconductors such as elemental silicon allowing both p‐type and n‐type doping are the backbone of the current microelectronics industry, while the continuous progress in fabrication techniques has been the key for ever‐increasing integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p‐type and n‐type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin‐film deposition method of choice for a number of challenging applications in microelectronics, and it would also be a highly relevant technology for transparent electronics. Currently the appropriate p‐type semiconducting compounds are far outnumbered by the n‐type compounds. Hence there is an obvious search for high‐quality thin films of new p‐type compound semiconductors. This is clearly seen in the increasing number of ALD papers published annualy on p‐type semiconducting materials. In this overview the current state of research in the field is briefly presented; the ALD processes so far developed for the various p‐type (transparent) conducting material candidates are summarized, and the most prominent electrical transport and optical properties achieved for these thin films are highlighted. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> >诸如元素硅的半导体，允许p型和n型掺杂是当前微电子工业的骨干，而制造技术的连续进展是不断增加的集成密度和装置小型化的关键。类似地，在需要P型和N型化合物半导体的强烈出现的透明领域中，此外，在整个可见光谱范围内也应该是透明的。原子层沉积（ALD）是微电子中许多具有挑战性应用的薄膜沉积方法，也是透明电子产品的高度相关技术。目前，适当的p型半导体化合物远远超过n型化合物。因此，对新型P型化合物半导体的高质量薄膜显而易见。这在越来越多的ALD论文上发表于P型半导体材料的缺乏数量。在这一概述中，简要介绍了该领域的当前研究状态;概括了迄今为止为各种P型（透明）导电材料候选物开发的ALD工艺，并且突出了对这些薄膜实现的最突出的电气传输和光学性质。</ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2017年第24期</span><b style="margin: 0 2px;">|</b><span>共16页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Tripathi Tripurari Sharan&option=202" target="_blank" rel="nofollow">Tripathi Tripurari Sharan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Karppinen Maarit&option=202" target="_blank" rel="nofollow">Karppinen Maarit;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Department of Chemistry and Materials ScienceAalto UniversityP.O. Box 16100 FI‐00076 Espoo Finland;</p> <p>Department of Chemistry and Materials ScienceAalto UniversityP.O. Box 16100 FI‐00076 Espoo Finland;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=atomic layer deposition&option=203" rel="nofollow">atomic layer deposition;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=p‐type semiconductors&option=203" rel="nofollow">p‐type semiconductors;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=thin films&option=203" rel="nofollow">thin films;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=transparent conducting oxides&option=203" rel="nofollow">transparent conducting oxides;</a> </p> <div class="translation"> 机译：原子层沉积;p型半导体;薄膜;透明导电氧化物; </div> </li> </ul> </div> </div> <div class="literature cardcommon" id="literaturereference" style="display:none"> <div class="similarity "> <h3 class="all_title" id="enpatent111">引文网络</h3> <div class="referencetab clearfix"> <ul id="referencedaohang"> <li dataid="referenceul">参考文献</li> <li dataid="citationul">引证文献</li> <li dataid="commonreferenceul">共引文献</li> <li dataid="commoncitationul">同被引文献</li> <li dataid="tworeferenceul">二级参考文献</li> <li dataid="twocitationul">二级引证文献</li> </ul> </div> <div class="reference_details" id="referenceList"> <ul id="referenceul"></ul> <ul id="citationul"></ul> <ul id="commonreferenceul"></ul> <ul id="commoncitationul"></ul> <ul id="tworeferenceul"></ul> <ul id="twocitationul"></ul> </div> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022434274.html">Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Tripathi Tripurari Sharan&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Tripathi Tripurari Sharan,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Karppinen Maarit&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Karppinen Maarit </a> <a href="/journal-foreign-18063/" target="_blank" rel="nofollow" class="tuijian_authcolor">Advanced materials interfaces .</a> <span>2017</span><span>,第24期</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：P型半导体薄膜的原子层沉积：综述</span> </p> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704014793119.html">Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Tripathi T. 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href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=施尔畏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,施尔畏</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=刘学超&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,刘学超</a> <span> <a href="/conference-cn-24244/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 第十四届全国化合物半导体材料、微波器件和光电器件学术会议 </a> <span> <span> . 2006</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020311562651.html">电化学原子层沉积法(EC-ALD)制备功能性纳米半导体薄膜及其应用研究</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=张欣&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 张欣</a> <span> . 2010</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/061203046809.html">P型氧化物半导体薄膜的原子层沉积</a> <b>[P]</b> . <span> 中国专利： CN107112198B </span> <span> . 2018.10.16</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/06120109611610.html">P型氧化物半导体薄膜的原子层沉积</a> <b>[P]</b> . <span> 中国专利： CN107112198A </span> <span> . 2017-08-29</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130423059485.html">Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer</a> <b>[P]</b> . <span> 外国专利：  US8148722B2 </span> <span> . 2012-04-03</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：使用原子层沉积和包括该P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130425581722.html">Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer</a> <b>[P]</b> . <span> 外国专利：  US7875559B2 </span> <span> . 2011-01-25</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：使用原子层沉积和包括该P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130425994974.html">METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER</a> <b>[P]</b> . <span> 外国专利：  US2011084274A1 </span> <span> . 2011-04-14</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：利用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法 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