G'/> <![CDATA[Core/shell structured <ce:italic>s</ce:italic>SiO <ce:inf loc='post'>2</ce:inf>/ <ce:italic>m</ce:italic>SiO <ce:inf loc='post'>2</ce:inf> composite particles: The effect of the core size on oxide chemical mechanical polishing]]>
首页> 外文期刊>Advanced Powder Technology: The internation Journal of the Society of Powder Technology, Japan >sSiO 2/ mSiO 2 composite particles: The effect of the core size on oxide chemical mechanical polishing]]>
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sSiO 2/ mSiO 2 composite particles: The effect of the core size on oxide chemical mechanical polishing]]>

机译:<! 斜体> SIO 2 复合颗粒:核心尺寸对氧化物化学机械抛光的影响]]>

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Graphical abstractDisplay OmittedHighlights?The core/shellsSiO2/mSiO2particles with controlled core sizes were obtained.?The dependence of oxide CMP performance on the core size was investigated.?The mesoporous silica shells contributed to the scratch reduction.?The surface roughness of the finished wafers increased as the core size increased.?The removal rate was related to the total contact area and indentation depth.AbstractIn a typical chemical mechanical polishing (CMP) process, the type, morphology, structure, mechanical, and surface characteristics of abrasive particles play an important role in influencing the material removal process. The novel abrasive particles with special mechanical and/or tribochemical properties have been introduced into CMP processes for the improvement of surface quality and finishing efficiency. In this work, the composite particles containing solid silica (sSiO2) cores and mesoporous silica (mSiO2) shells were preparedviaa developed St?ber method using cetyltrimethylammonium bromide as a structure-templating surfactant. The as-synthesized core/shell structuredsSiO2/mSiO2composite particles were characterized by powder X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, and nitrogen sorption–desorption measurements. The effect of thesSiO2core size of the composite particles on oxide CMP performance was evaluated in terms of surface roughness and material removal rate (MRR). The root-mean-square surface roughness (0.15–0.31nm) of the polished substrates slightly increased with increasing of thesSiO2core size (168–353nm) of the composites with a comparablemSiO2shell thickness (16–18nm). ThesSiO2/mSiO2composite particles with a relatively smaller or larger core presented a relatively highMRRfor silicon oxide films. These oxide CMP results could be rationalized according to t
机译:<![cdata [ 图形摘要 显示省略 突出显示 < CE:简单段ID =“SP0010”View =“全部”> 核心/ shell s sio 2 / m sio 2 具有受控核尺寸的粒子。 氧化物CMP性能对核心大小的依赖性进行了研究。 中孔二氧化硅壳导致划痕减少。 < / ce:list-item> 表面粗糙度随着核心尺寸的增加,成品晶片增加。 删除速率与总接触区域和缩进深度有关。 抽象< / ce:section-title> 在典型的化学机械抛光(CMP)过程中,磨料颗粒的类型,形态,结构,机械和表面特性在影响材料去除过程中起重要作用。已经将具有特殊机械和/或致性化学性质的新型磨料颗粒引入CMP工艺,以提高表面质量和整理效率。在这项工作中,含有固体二氧化硅的复合颗粒( s sio 2 )核和中孔二氧化硅( M SIO 2 )壳被编写通过效率的ST?使用西甲酰三甲基溴化铵作为结构模板表面活性剂。 AS合成的核心/壳结构 s sio 2 / m SIO 2 复合颗粒的特征在于粉末X射线衍射,场发射扫描电子显微镜,透射电子显微镜和氮吸附 - 解吸测量。 s siO 2 在表面上的氧化物CMP性能上的核心尺寸评估粗糙度和材料去除率( MRR )。抛光基板的根平均方形表面粗糙度(0.15-0.31nm)随着 s sio 2 复合材料的核心尺寸(168-353nm),具有可比的 m sio 2 shell厚度( 16-18nm)。 s sio 2 / m sio 2 具有相对较小或更大核心的复合颗粒呈现相对高的 MRR 用于氧化硅膜。这些氧化物CMP结果可以根据T合理化

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