Electrical resistivity and the Neel point of Mn100-xCrx thin films

摘要

Electrical resistivity measurements have beencarried out on thermal evaporated Mn100-xCrx (X=0.5,1,2,) thinfilms between 300 and 1.4K using the van der Pauw four probetechnique. A resemblance of the resistivity-temperature behaviourtypical of the bulk ?-Mn-Rich, specimen is obtained with the 0.5at .%Cr in Mn. The Neel point of this specimen is shifted to 83+-1K from the known value of 90+- 1K for ?-Nn. The Neel point isshifted further to lower values as the concentration of Cr in Mnincreases. The low temperature resistivity minimum may beinterpreted as due to the presence of Cr impurities in the Mn filmgiving rise to a distortion of the magnetic moment of themanganese atoms and thus leading to spin fluctuation scattering ofthe conduction electrons. 2000 Elsevier Science Ltd. All rights reserved.