Performance of electronic switching circuits based on bipolar power transistors at low temperature

摘要

In this paper, the performance of the bipolar power transistor of the type MJE13007 was evaluated under very low temperature levels. The investigation was carried out to establish a baseline on functionality and to determine suitability of this device for use in space applications under cryogenic temperatures. The static and dynamic electrical characteristics of the proposed transistor were studied at low temperature levels ranging from room level (300 K) down to 100 K. From which, it is clear that, several electrical parameters were affected due to operation on such very low temperature range, e.g. the threshold voltage (V_?) increasing from 0.62 up to 1.05 V; while the current gain h_(FE) decreases significantly from 26 down to 0.54.