Experimental investigation of 3-W class-AB cryogenically-cooled amplifier employing GaN HEMT for front end receivers of mobile base stations

摘要

This paper presents experimental results of a 2-GHz band gallium nitride high electron mobility transistor (GaN HEMT) amplifier cryogenically-cooled to 60 K as a part of the cryogenic receiver front end (CRFE) for mobile base station receivers. At a temperature of 60 K, the GaN HEMT amplifier attains the maximum power added efficiency of 62 percent, the saturation output power of 35 dBm, the gain of 26 dB, and the noise figure of 2.6 dB when operating at class-AB biasing. The results reported herein are the first on the performance of a cryogenically-cooled GaN HEMT amplifier aiming at use in a 2-GHz band CRFE.