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首页> 外文期刊>Contributions to Plasma Physics >Impact of hexamethyldisiloxane admixtures on the discharge characteristics of a dielectric barrier discharge in argon for thin film deposition
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Impact of hexamethyldisiloxane admixtures on the discharge characteristics of a dielectric barrier discharge in argon for thin film deposition

机译:六甲基二硅氧烷混合物对薄膜沉积氩气屏障放电的放电特性的影响

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摘要

xml:id="ctpp201700060-para-0001"> Atmospheric‐pressure dielectric barrier discharges ( DBDs ) in argon with admixtures of small amounts of hexamethyldisiloxane ( HMDSO ) have been analysed by means of numerical modelling. A time‐dependent, spatially one‐dimensional fluid‐Poisson model has been used, which takes into account the spatial variation of the discharge plasma between the plane‐parallel dielectrics covering the electrodes. Main features of the model, including the reaction kinetics for HMDSO , are given. Good agreement with related experimental studies of the ignition voltage for HMDSO amounts of up to 200?ppm and the temporal course of the discharge current for conditions typical of deposition experiments is obtained by the model calculations when assuming that 30% of the reactions of HMDSO with excited argon atoms, with a rate coefficient of 5.0?×?10 ?10 ?cm 3 /s, lead to the production of electrons due to Penning ionization. The modelling results for constant frequency f ?=?86.2? kHz and applied voltage U a ?=?4? kV show that the electrical energy dissipated in the DBD decreases with an increasing amount of HMDSO and enable the determination of the energy absorbed per HMDSO molecule on the basis of their energy balance. The analysis of the plasma–chemical processes also makes clear that collision processes of HMDSO with excited argon atoms and molecules leading to neutral reaction products are essential for the formation of thin polymer films.
机译:

大气压介电屏障放电( DBDS )通过数值建模分析了具有少量六甲基二硅氧烷( HMDSO )的氩气的氩气。已经使用了时间依赖的空间一维流体 - 泊松模型,其考虑了覆盖电极的平面平行电介质之间的放电等离子体的空间变化。给出了模型的主要特征,包括 HMDSO 的反应动力学。对于为 HMDSO的点火电压的相关实验研究,高达200μlPPM的点火电压以及用于典型沉积实验的典型沉积实验的排出电流的时间过程的良好一致性通过模型计算获得了30 HMDSO 具有激发氩原子的反应的百分比,速率系数为5.0?×10 α10Δcm 3 / s,由于捏合电离导致电子产生电子。恒定频率的建模结果 f ?=?86.2? KHz 和施加电压 U a ?=?4? KV 表明,在 DBD 中散发的电能随着 HMDSON 的增加而降低,并能够确定每个吸收的能量HMDSO 分子在其能量平衡的基础上。对等离子体化学过程的分析还明确表示 HMDSO 的碰撞过程具有激发的氩气原子和导致中性反应产物的分子对于形成薄聚合物薄膜是必不可少的。

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