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首页> 外文期刊>Computer physics communications >Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes
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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

机译:能源节约,非结构化网眼半导体器件的自我释放蒙特卡罗模拟

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摘要

Unphysical self-forces resulting from the particle-mesh coupling occur when ensemble Monte Carlo simulations of semiconductor devices use an unstructured mesh to describe device geometry. We report on the development of a correction to the driving electric field on arbitrary meshes and show that self-forces can be virtually eliminated on a finite element mesh at a small additional computational cost. The developed methodology is included into a self-consistent 3D finite element Monte Carlo device simulator. We show the efficiency of the method simulating an isolated particle and obtaining kinetic energy conservation down to a magnitude of 10(-10) meV. The methodology is later applied to a FinFET simulation to show what impact can be expected from the self-forces using traditional electric field interpolation strategies. We find that for a large enough ensemble of particles, the impact of self-forces on the final I-D-V-G is almost negligible. (C) 2014 Elsevier B.V. All rights reserved.
机译:当半导体器件的集合Monte Carlo模拟使用非结构化网格来描述设备几何形状时,发生由粒子网耦合产生的不关象力的自力。 我们向任意网格上的驱动电场进行校正的发展,并表明可以以小额计算成本在有限元网上实际上消除自力。 开发的方法包括在自我一致的3D有限元蒙特卡罗设备模拟器中。 我们展示了模拟隔离粒子的方法的效率,并将动能节约降至10(-10)MeV的幅度。 稍后将该方法应用于FinFET仿真以显示使用传统电场插值策略的自我力量可以预期的影响。 我们发现,对于足够大的粒子的整体,自我力量对最终I-D-V-G的影响几乎可以忽略不计。 (c)2014 Elsevier B.v.保留所有权利。

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