Effect of the built-in electric field on electron Raman scattering of parabolic InxGa1-xN/GaN quantum dot

摘要

In this work, we have theoretically studied differential cross section (DCS) of Raman scattering of InxGa1xN/GaN quantum dot (QD) within the frame work of effective-mass approximation at 0K. Numerical calculations show that built-in electric field has a significant influence on the DCS. We find that the change of built-in electric field and parabolic frequencies can induce Raman shifts, and the full width at half maximum (FWHM) of Raman spectrum increases with increasing built-in electric field.