Organic Thin-Film Transistors Fabricated by Solution-Processed and Low-Temperature Condensed Hybrid Gate Dielectrics

摘要

Herein,we report on the preparation of new solution-processed and low-temperature condensed organic-inorganic hybrid dielectric films and their electrical properties for applications in low-power organic thin-film transistors(OTFTs).The low-temperature condensed hybrid dielectric films(~19 nm thick)were simply fabricated by spin coating a mixture solution of a zirconium chloride and synthesized bifunctional phosphonic acid organic reagents,followed by annealing at a relatively low temperature(~90 °C).The prepared hybrid dielectric films exhibited excellent dielectric properties(low leakage current density < 10~(-6)A/cm~2 and high capacitance of 520 nF/cm~2)as well as a smooth surface(RMS roughness <0.3 nm).Consequently,the pentacene-based OTFTs were fabricated using these hybrid dielectrics and functioned effectively at a relatively low operating bias(-2 V)and exhibited great TFT characteristics(hole mobility:0.3 cm~2/V/s,low threshold voltage:-0.7 V,low subthreshold swing:0.17 V/dec,on/off current ratio:10~5).