Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors

摘要

We report on the photoresponse of mid-wavelength infrared radiation(MWIR) type-II superlattices(T2SLs) InAs/InAsSb high operating temperature(HOT) photoresistor grown on GaAs substrate.The device consists of a 200 periods of active layer grown on GaSb buffer layer.The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively.The time constant of 30 ns is observed at 200 K under 1 V bias.This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..