Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics

摘要

Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.