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IGBT STRUCTURE FOR WIDE BAND-GAP SEMICONDUCTOR MATERIALS
IGBT STRUCTURE FOR WIDE BAND-GAP SEMICONDUCTOR MATERIALS
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机译:宽带间隙半导体材料的IGBT结构
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摘要
An IGBT device includes an IGBT stack, a collector contact, a gate contact, and an emitter contact. The IGBT stack includes an injector region, a drift region over the injector region, a spreading region over the drift region, and a pair of junction implants in the spreading region. The spreading region provides a first surface of the IGBT stack, which is opposite the drift region. The pair of junction implants is separated by a channel, and extends from the first surface of the IGBT stack along a lateral edge of the IGBT stack towards the drift region to a first depth, such that the thickness of the spreading region is at least one and a half times greater than the first depth.
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