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首页> 外文期刊>Brazilian journal of physics >LO-Phonon-Limited Electron Mobility in a Core-Shell Polar Semiconductor Quantum Wire
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LO-Phonon-Limited Electron Mobility in a Core-Shell Polar Semiconductor Quantum Wire

机译:LO-Phonon - 核心壳极半导体量子线中的电子迁移率

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Electron scattering rate and electron mobility limited by LO-phonons are calculated for a cylindrical polar semiconductor quantum wire with core-shell structure. Longitudinal optical phonons modes are developed within a dielectric continuum model. The influence of the thickness of the shell on the electron scattering rate by phonons is studied. Numerical calculations performed for a GaAs/AlGaAs quantum wire show that the electron-LO-phonon scattering rate changes with the thickness of the shell layer and is reduced considerably in the quantum wires having thicker shell, leading to higher electron mobility. The mobility can be improved up to several orders of magnitude.
机译:用圆柱形极性半导体量子线计算具有核心壳结构的圆柱极性半导体量子线的电子散射速率和电子迁移率。 纵向光学声子模式在介电连续体模型中显影。 研究了壳体厚度对通过声子的电子散射速率的影响。 对GaAs / AlGaAs量子线进行的数值计算表明,电子-TO-源散射速率随壳层的厚度而变化,并且在具有较厚的壳体的量子线中显着减小,导致更高的电子迁移率。 移动性可以提高到几个数量级。

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