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Design and Implementation of CNTFET-Based Reversible Combinational Digital Circuits Using the GDI Technique for Ultra-low Power Applications

机译:基于CNTFET的可逆组合数字电路的设计与实现超低功耗应用的GDI技术

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It is obvious that the design of low power digital circuits is very important. Hence, reversible logic can be used as the great method for reducing power consumption. In this paper, we attempt to present various CNTFET-based reversible combinational circuits such as multiplexers and decoders by simultaneous use of the reversible Fredkin gate and Gate Diffusion Input (GDI) technique. At first, we illustrate the block diagram of multiplexers and decoders according to the definition of reversible gates. Then, we introduce the design approach of CNTFET-based circuits by using the GDI technique. All structures are simulated using Synopsys HSPICE with standard 32 nm CNTFET technology in various conditions including temperature 27 degrees C, simulation time from zero to 100 ns, and other parameters are the variable. In this work, we investigate the variation effect of supply voltage, temperature, number of nanotubes, and chiral vector in performance evaluation of the mentioned circuits. In addition, the ECPOT analysis is reported. According to the results, the proposed CNTFET-based reversible multiplexers achieve a significant saving in average power consumption (approximately 99.99% for 2:1 multiplexer, 99.95% for 4:1 multiplexer, 99.96% for 8:1 multiplexer compared with the best previous work) and the average power consumption for 16:1 multiplexer is 25.47 nw. The proposed CNTFET-based reversible decoders have high performance in the average power consumption (approximately 99.99% for 2:4 decoder, 99.99% for 3:8 decoder, and 99.22% for 4:16 decoder compared with the best previous work). Moreover, applying these suggested circuits significantly improves the speed, PDP, and EDP of complex arithmetic structures.
机译:很明显,低功耗数字电路的设计非常重要。因此,可逆逻辑可用作降低功耗的伟大方法。在本文中,我们尝试通过同时使用可逆的褶皱栅极和栅极扩散输入(GDI)技术来展示多路复用器和解码器等各种基于CNTFET的可逆组合电路。首先,我们示出了根据可逆门的定义的多路复用器和解码器的框图。然后,我们使用GDI技术介绍基于CNTFET的电路的设计方法。所有结构都使用Synopsys Hspice在各种条件下使用标准32 nm cntfet技术进行模拟,包括温度27摄氏度,从零到100ns的模拟时间,其他参数是变量。在这项工作中,我们研究了所提到的电路的性能评估中的供电电压,温度,纳米数量和手性载体的变化效应。此外,报告了ECPOT分析。根据结果​​,所提出的基于CNTFET的可逆多路复用器在平均功耗中显着节省(约99.99%,对于2:1多路复用器,4:1多路复用器99.95%,8:1多路复用器99.96%与最佳先前相比工作)和16:1多路复用器的平均功耗为25.47 NW。拟议的基于CNTFET的可逆解码器在平均功耗中具有高性能(约为2:4解码器的99.99%,对于3:8解码器为99.99%,以及4:16解码器的99.22%,与最佳的先前工作相比)。此外,应用这些建议的电路显着提高了复杂算术结构的速度,PDP和EDP。

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