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SiO2-Ti0.98In0.01Nb0.01O2 composite ceramics with low dielectric loss, high dielectric permittivity and an enhanced breakdown electric field

机译:SiO2-Ti0.98in0.01NB0.01O2复合陶瓷,具有低介电损耗,高介电常数和增强击穿电场

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摘要

SiO2-Ti0.98In0.01Nb0.01O2 (SiO2-TINO) composite ceramics were synthesized by solid-state sintering methods. The dielectric loss can be lowered and the breakdown electric field can be greatly enhanced by doping 2 mol% SiO2 into TINO ceramics, while preserving the relatively high dielectric permittivity (similar to 30 000). The microstructure and electrical response of SiO2-TINO composite ceramics were studied to investigate the reasons for these good dielectric properties. The lower dielectric loss and enhanced breakdown electric field were attributed to the embedding of SiO2 in the TINO grain boundaries, which induced a drop in the potential and a blocking effect around the grain boundaries for the 2 mol% SiO2-TINO composite ceramic. The results provide a way to lower the dielectric loss and enhance the breakdown voltage by tuning the grain boundary.
机译:通过固态烧结方法合成SiO2-Ti0.98In0.01NB0.01O2(SiO2-Tino)复合陶瓷。 通过将2mol%SiO2掺杂到TINO陶瓷,可以大大提高介电损耗,并且可以大大提高击穿电场,同时保持相对高的介电介电常数(类似于30 000)。 研究了SiO2-TINO复合陶瓷的微观结构和电气响应,研究了这些良好介电性能的原因。 较低的介电损耗和增强的击穿电场归因于嵌入TIN晶界中的SiO 2,其诱导围绕2mol%SiO 2-Tino复合陶瓷的晶界潜在和阻断效果。 结果提供了一种降低介电损耗并通过调谐晶界来提高击穿电压的方法。

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  • 来源
    《RSC Advances》 |2016年第24期|共7页
  • 作者单位

    Xi An Jiao Tong Univ Minist Educ Key Lab Elect Mat Res Lab Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Minist Educ Key Lab Elect Mat Res Lab Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Minist Educ Key Lab Elect Mat Res Lab Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Minist Educ Key Lab Elect Mat Res Lab Xian 710049 Peoples R China;

    Penn State Univ Mat Res Inst University Pk PA 16802 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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