A Low-Power Variation-Aware Adaptive Write Scheme for Access-Transistor-Free Memristive Memory

摘要

Recent advances in access-transistor-free memristive crossbars have demonstrated the potential of memristor arrays as high-density and ultra-low-power memory. However, with considerable variations in the write-time characteristics of individual memristors, conventional fixed-pulse write schemes cannot guarantee reliable completion of the write operations and waste significant amount of energy.