首页> 外文期刊>ACM Transactions on Design Automation of Electronic Systems >Performance-Driven Unit-Capacitor Placement of Successive-Approximation-Register ADCs
【24h】

Performance-Driven Unit-Capacitor Placement of Successive-Approximation-Register ADCs

机译:逐次逼近寄存器ADC的性能驱动的单位电容器布局

获取原文
获取原文并翻译 | 示例
       

摘要

The performance of many switched-capacitor analog integrated circuits, such as analog-to-digital converters (ADCs) and sample and hold circuits, is directly related to their accurate capacitance ratios. In general, capacitor mismatch can result from two sources of errors: random mismatch and systematic mismatch. Paralleling unit capacitance (UC) with a common-centroid structure can alleviate the random mismatch errors. The complexity of generating an optimal solution to the UC placement problem is extremely high, let alone if both placement and routing problems are to be optimized simultaneously. This article evaluates the performance of the UC placement generated in an existing work and proposes an alternative UC placement to achieve optimal ratiomismatch M and better linearity performance of SAR ADC design. Results show that the proposed UC placement achieves a ratio mismatch of M = 0.695, the effective number of bits ENOB = 8.314 bits, and the integral nonlinearity INL = 0.816 LSB (least significant bits) for a 9-bit SAR ADC design.
机译:许多开关电容器模拟集成电路(例如模数转换器(ADC)和采样保持电路)的性能直接与其精确的电容比有关。通常,电容器失配可能由两个误差源引起:随机失配和系统失配。具有公共质心结构的并联单元电容(UC)可以减轻随机失配误差。为UC放置问题生成最佳解决方案的复杂性非常高,更何况要同时优化放置和布线问题。本文评估了现有工作中产生的UC放置的性能,并提出了一种替代UC放置,以实现最佳的比率失配M和SAR ADC设计的更好的线性性能。结果表明,对于9位SAR ADC设计,拟议的UC放置实现了比率失配M = 0.695,有效位数ENOB = 8.314位以及积分非线性INL = 0.816 LSB(最低有效位)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号