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Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon

机译:空位缺陷对中子辐射Czochralski硅机械性能的影响

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摘要

We have investigated the mechanical properties of neutron irradiated Czochralski (NICZ) silicon using nanoindentations combined with micro-Raman spectroscopy. It is found that NICZ silicon shows higher hardness (similar to 13% higher) than non-irradiated silicon, with a slightly lower Young's modulus. When the samples were subjected to isochronal anneals in the temperature range of 250 degrees C-650 degrees C, the hardness of NICZ silicon gradually decreases as the temperature increases and it is finally comparable to that of the non-irradiated silicon. The vacancies and vacancy-oxygen defects induced by neutron irradiation in NICZ silicon annihilate or transform into more complex defects during the annealing processes. It suggests that the vacancy defects play a role in the evolution of hardness, which promote phase transition from the Si-I phase to the stiffer Si-II phase in NICZ silicon during indentation. In addition, the irradiation induced vacancy defects could lead to the lower Young's modulus.
机译:我们研究了使用纳米茚满与微拉曼光谱的纳米茚满的中子辐照Czochralski(Nicz)硅的力学性能。发现Nicz硅的硬度比非照射硅更高(类似于13%),杨氏模量略低。当样品在250℃-650℃的温度范围内进行等时退火时,随着温度的增加,NicZ硅的硬度随着温度的增加而逐渐降低,并且最终与非照射硅的硅的硬度降低。 NicZ硅中中子辐射诱导的空位和空位 - 氧缺陷在退火过程中湮灭或转化为更复杂的缺陷。它表明空位缺陷在硬度的演变中起作用,其在压痕期间促进从Si-1相到Nicz硅中的Si-I相的相转变。此外,辐照诱导的空位缺陷可能导致较低的杨氏模量。

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    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物质分子运动论 ;
  • 关键词

    Czochralski silicon; neutron irradiation; nanoindentation; hardness; vacancy defects;

    机译:Czochralski硅;中子辐照;纳米endentation;硬度;空位缺陷;

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