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机译:空位缺陷对中子辐射Czochralski硅机械性能的影响
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Peoples R China;
Czochralski silicon; neutron irradiation; nanoindentation; hardness; vacancy defects;
机译:空位缺陷对中子辐射Czochralski硅机械性能的影响
机译:中子辐照直拉硅中亚稳空位-双氧配合物的形成动力学及机理
机译:中子辐照切克劳斯基硅中空位的退火行为
机译:高温退火后快中子辐照氮掺杂的直拉硅的缺陷
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:空位簇缺陷对硅晶体电学和热力学性质的影响
机译:辐照产生的点缺陷和点缺陷团聚体的理论研究及其对碳化硅中光学性能的影响=通过量子力学计算对辐照的碳化硅中的点缺陷及其团聚体及其对光学性能的影响
机译:高压 - 高温处理对中子辐照诱导的切克劳斯硅缺陷的影响。