Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

摘要

We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8-xPrxCa3/8MnO3 (x = 0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.