首页> 外文会议>Symposium on Polycrystalline Metal and Magnetic Thin Films held April 5-8, 1999, San Francisco, California, U.S.A. >Effects of magnetic and non-magnetic impurity addition on magnetoresistance behavior of lanthanum manganite thin films
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Effects of magnetic and non-magnetic impurity addition on magnetoresistance behavior of lanthanum manganite thin films

机译:添加磁性和非磁性杂质对锰酸镧薄膜磁致电阻行为的影响

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摘要

In this paper, we report our studies on the growth, structural, magnetotransport and magnetic properties of La_(1-x)Ca_xMnO_3: Co/Ag. Thin films of these materials were grown in situ on (100) LaAlO_3 substrates using a pulsed laser deposition technique. Microstructural characterization carried out on these films show that the films are single phase, textured and smooth. The temperature dependence of resistance of the films in the 10 - 300 K range was examined in zero and applied field using four-probe technique and magneticzation measurements were carried out using the quantum design superconducting quantum interference device (SQUID) magnetometer. The MR ratios of La_(0.7)Ca_(0.3)MnO_3, Ag added La_(0.7)Ca_(0.3)MnO_3 and Co added La_(0.7)Ca_(0.3)MnO_3 films were found to be 200percent, 3.4 x 10~4percent and 660percent in 5 T and 21percent, 435percent and 30percent in 0.1 T respectively. The enhanced MR ratio in the case of Ag added La_(0.7)Ca_(0.3)MnO_3 films is attributed to the increase in the oxygen content and in the case of Co added La_(0.7)Ca_(0.3)MnO_3, it can be attributed tot he Co supplying some additional magnetic field.
机译:在本文中,我们报告了我们对La_(1-x)Ca_xMnO_3:Co / Ag的生长,结构,磁传输和磁性能的研究。这些材料的薄膜使用脉冲激光沉积技术在(100)LaAlO_3衬底上原位生长。在这些薄膜上进行的微结构表征表明,该薄膜是单相的,织构化的和光滑的。使用四探针技术在10-300 K范围内检查了薄膜电阻的温度依赖性,并使用四探针技术对其施加了磁场,并使用量子设计超导量子干涉仪(SQUID)磁力计进行了磁化测量。发现La_(0.7)Ca_(0.3)MnO_3,Ag加入La_(0.7)Ca_(0.3)MnO_3和Co加入La_(0.7)Ca_(0.3)MnO_3的MR比为200%,3.4 x 10〜4%和5 T中为660%,0.1 T中为21%,435%和30%。在Ag添加La_(0.7)Ca_(0.3)MnO_3膜的情况下提高的MR比归因于氧含量的增加,在Co添加La_(0.7)Ca_(0.3)MnO_3的情况下,可以归因于此他提供了一些额外的磁场。

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