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机译:肖特基与欧姆触点与β-GA2O3薄膜的光电特性比较
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
Univ Chinese Acad Sci Ctr Mat Sci &
Optoelect Engn Beijing 100049 Peoples R China;
KAUST Adv Semicond Lab Thuwal 239556900 Saudi Arabia;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
KAUST Adv Semicond Lab Thuwal 239556900 Saudi Arabia;
Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &
Devices Hangzhou 310018 Peoples R China;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun Lab Informat Funct Mat &
Devices Sch Sci Beijing 100876 Peoples R China;
beta-Ga2O3; Schottky and Ohmic contacts; optoelectrical characteristics; metal-organic chemical vapor deposition (MOCVD);
机译:肖特基与欧姆触点与β-GA2O3薄膜的光电特性比较
机译:Ti / Ni / Ti / Au欧姆接触和肖特基转变为掺杂Al的ZnO薄膜
机译:温度对β-Ga2O3薄膜光电性能影响的初步研究
机译:使用欧姆和肖特基源/漏极接触构造的共轭聚合物薄膜晶体管
机译:热稳定的欧姆和肖特基接触氮化镓。
机译:纳米多孔TiO2薄膜光阳极与氧化还原电解质溶液接触的肖特基结/欧姆接触行为
机译:肖特基与欧姆触点与β-GA2O3薄膜的光电特性的比较