首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Suppressing the dynamic precipitation and lowering the thermal conductivity for stable and high thermoelectric performance in BaCu2Te2 based materials
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Suppressing the dynamic precipitation and lowering the thermal conductivity for stable and high thermoelectric performance in BaCu2Te2 based materials

机译:抑制动态沉淀并降低基于Bacu2te2的材料中稳定和高热电性能的导热率

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摘要

Dynamic precipitation phenomena are usually observed in Cu- and Ag-based thermoelectric compounds undergoing a temperature rise, affecting the stability and thermoelectric figure of merit zT. The present work demonstrates that rational controlling of the Cu content would eliminate unstable factors in BaCu2Te2, beneficial for achieving stable and reliable thermoelectric materials. Over-stoichiometric Cu in BaCu2Te2 can not only optimize the hole concentration approaching the optimal one, but also lead to the stable degenerate semiconducting behaviors. More importantly, despite the intrinsically low lattice thermal conductivity originating from the small phonon group velocities and mean free path, the excess Cu content generates widely distributed Cu-rich nano-precipitates with a size of 20-50 nm. These nano-precipitates significantly contribute to low-frequency phonon scattering for further reducing the thermal conductivity, and thus more than 25% of the kappa reduction has been achieved at room temperature (0.95 W m(-1) K-1 for BaCu2Te2 and 0.70 W m(-1) K-1 for BaCu2.08Te2). A high figure of merit zT = 1.31 at 833 K has been realized for the sample BaCu2+xTe2 (x = 0.04), which is superior to the state of the art p-type Zintl phase thermoelectric materials.
机译:在经历温度升高的Cu-和Ag基热电化合物中通常观察到动态沉淀现象,影响优异ZT的稳定性和热电图。本作者证明了Cu含量的合理控制将消除Bacu2te2中的不稳定因素,有利于实现稳定可靠的热电材料。在Bacu2te2中的过化学计量不能仅优化接近最佳的空穴浓度,而且导致稳定的退化半导体行为。更重要的是,尽管源自小的声音群速度和平均自由路径的本质上是低的晶格导热系数,但过量的Cu含量产生广泛分布的Cu的纳米沉淀物,尺寸为20-50nm。这些纳米沉淀物显着促进低频声子散射,以进一步降低导热率,因此在室温(0.95WM(-1)K-1的kappa还原中,超过25%的kappa减少(0.95W m(-1)k-1,用于bacu2te2和0.70用于Bacu2.08te2的W m(-1)k-1)。已经实现了833 k处的高度优异ZT = 1.31,用于样品Bacu2 + Xte2(x = 0.04),其优于现有技术的P型Zintl相热电材料的状态。

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    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Mat Genome Inst 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Mat Genome Inst 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Mat Genome Inst 99 Shangda Rd Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn 99 Shangda Rd Shanghai 200444 Peoples R China;

    Guilin Univ Elect Technol Sch Mat Sci &

    Engn Guilin 541004 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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