Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

摘要

Carbon-doped InGaAsBi films on InP/Fe (100) substrates have been grown by molecular beam epitaxy (MBE). It has been found that Bismuth incorporation induces extremely high n-type carbon-doped InGaAsBi films, and its electron concentration increases linearly up to 10(21) cm(-3) (highest reported to date for n-type III-V semiconductor materials) with increased CBr4 supply pressure, implying InGaAsBi to be a prospective ohmic contact material for InP-based terahertz transistors. It also has been proved by secondary ion mass spectroscopy that the alloy composition of carbon-doped InGaAsBi is altered by the preferential etching effect of CBr4, but the etching effect on the Bi content is negligible.