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Low-voltage multicolor electroluminescence from all-inorganic carbon dots/Si-heterostructured light-emitting diodes

机译:来自全无机碳点/ Si-异质结构发光二极管的低压多色电致发光

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摘要

Low-voltage and multicolor electroluminescent light-emitting diodes (LEDs) based upon carbon dots (CDs) are demonstrated by using simple all-inorganic CDs/Si heterostructures. Electroluminescence (EL) originations of the CDs/Si LEDs are investigated clearly without the interference of commonly used organic semiconductors. Three distinct peaks at 438, 540, and 600nm are achieved in the EL spectra of the CDs/Si LEDs, and they are found to only originate from the CDs. Addition of a PMMA polymer does not influence the EL originations, but improves the flatness of the CD active layer, thereby enhancing the EL performance of the CDs/Si LEDs. Most strikingly, the emission threshold voltage of such all-inorganic CDs/Si LEDs is as low as 3.4V, which is the lowest onset voltage among the CDs-based LEDs by using fluorescent CDs as the active emitter. The ultra-low driving voltage proves the feasibility of the all-inorganic CDs/Si LEDs in the future multicolor solid-state lighting applications.
机译:通过使用简单的全无机CDS / Si异质结构来证明基于碳点(CDS)的低压和多色电致发光发光二极管(LED)。 CDS / SI LED的电致发光(EL)清晰地研究了常用有机半导体的干扰。 在CDS / Si LED的EL光谱中实现了438,540和600nm的三个不同峰,并且发现它们仅源自CD。 添加PMMA聚合物不会影响EL起源,而是改善CD活性层的平坦度,从而提高CDS / SI LED的EL性能。 最引人注目的是,这种全无机CDS / SI LED的发射阈值电压低至3.4V,这是通过使用荧光CD作为有源发射器的基于CDS的LED之间的最低发行电压。 超低驱动电压证明了未来多色固态照明应用中的全无机CDS / SI LED的可行性。

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  • 来源
    《Journal of Materials Science》 |2019年第11期|共12页
  • 作者单位

    Guangxi Univ Sch Phys Sci &

    Technol Ctr Nanoenergy Res Nanning 530004 Guangxi Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Guangxi Key Lab Relativist Astrophys Nanning 530004 Guangxi Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Guangxi Key Lab Relativist Astrophys Nanning 530004 Guangxi Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Guangxi Key Lab Relativist Astrophys Nanning 530004 Guangxi Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Ctr Nanoenergy Res Nanning 530004 Guangxi Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Guangxi Key Lab Relativist Astrophys Nanning 530004 Guangxi Peoples R China;

    Chinese Acad Sci Dalian Inst Chem Phys Dalian 116023 Liaoning Peoples R China;

    Guangxi Univ Sch Phys Sci &

    Technol Guangxi Key Lab Relativist Astrophys Nanning 530004 Guangxi Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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