...
首页> 外文期刊>Journal of Materials Science >Ferroelectric and piezoelectric response in (100)-oriented Mn-doped Bi0.5Na0.5TiO3-BaTiO3 thin films
【24h】

Ferroelectric and piezoelectric response in (100)-oriented Mn-doped Bi0.5Na0.5TiO3-BaTiO3 thin films

机译:(100)-Olectored Mn-Doped Bi0.5na0.5tio3-Batio3薄膜的铁电和压电反应

获取原文
获取原文并翻译 | 示例

摘要

In this work, high-quality Mn-doped 0.935Bi(0.5)Na(0.5)TiO(3)-0.065BaTiO(3) (Mn-BNBT) ferroelectric film was prepared on the SrRuO3-buffered (100)-oriented SrTiO3 single-crystal substrate using pulsed laser deposition method. The phase structure, morphology, domain and electrical properties were studied. Large remnant polarization P-r up to 35 mu C/cm(2), moderate dielectric constant e33T/e(0) of 800 and low dielectric loss tan delta of 0.037 at 1 kHz was obtained at room temperature along with excellent local piezoelectric response. The temperature dependence of the ferroelectric hysteresis loop measurements indicates the ferroelectric long-range order can be sustain as high as 150 degrees C. The excellent global properties make the present Mn-BNBT thin film quite potential in environmental-friendly piezoelectric integrated device applications.
机译:在这项工作中,在Srruo3缓冲(100) - oriented的Srtio3单单单单单个SRTiO3单次上制备高质量的MN掺杂0.935(0.5)Na(0.5)纳(0.5)纳(0.5)TiO(3)-0.065batiO(3)(MN-BNBT)铁电薄膜 - 使用脉冲激光沉积法的晶体基材。 研究了相结构,形态,结构域和电性能。 在室温下,在室温下,在室温下,在室温下,在室温下,在室温下获得800℃,低介电常数E33t / e(0),适度介电常数E33t / e(0)为0.037的低介电损耗Tanδ,以及优异的局部压电反应。 铁电磁滞回路测量的温度依赖性表示铁电远程顺序可以维持高达150℃。优异的全局性质使得本发明的MN-BNBT薄膜在环保的压电集成装置应用中具有相当潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号