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首页> 外文期刊>Journal of Electronic Materials >Effects of Zirconium Ions Doping on the Structural and Thermochromic Properties of VO2 Thin Films
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Effects of Zirconium Ions Doping on the Structural and Thermochromic Properties of VO2 Thin Films

机译:锆离子掺杂对VO2薄膜结构和热致变色特性的影响

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As an inorganic functional material, VO2 thin films are expected to be used for smart windows. However, these films are not conducive to practical applications when the phase transition temperature (Tc) of the VO2 is approximately 68A degrees C, which is greater than room temperature. To decrease Tc, the effect of Zr4+ doping on the structure and properties of VO2 films were investigated. The films were prepared using a sol-gel process, spin-coating on quartz glasses, and annealing at 525A degrees C in a tube furnace within a nitrogen atmosphere. The results demonstrate that these films have a highly preferential crystalline orientation on the substrate; however, the primary two x-ray diffraction pattern peaks shift slightly toward the small angle, and when 7 at.% Zr4+ was doped in the VO2 film, the deviation angle was 0.16A degrees, and the crystallite size was approximately 98 nm. A large number of grains were found on the surface of the pure VO2 films, but all the Zr4+ doped films had a layered structure, and the thickness of the films was approximately 200 nm. The Tc of these films was characterized using differential scanning calorimetry, and the luminous and solar transmittance was characterized using a UV-Vis-NIR spectrophotometer, which demonstrated that the effect of Zr4+ doping decreased Tc by approximately 1A degrees C per 1 at.% on average, and the Tc of the 7 at.% film was slightly greater than that of the 5 at.% film, the phase transition temperature of which was 61.4A degrees C. The transmittance decreased as the doping concentration increased, and 1 at.% Zr4+ doping increased the luminous regulation efficiency (Delta T (lum)) and solar modulation efficiency (Delta T (sol)). The Delta T (lum) of the pure VO2 film and the 1 at.% Zr4+-doped VO2 films was 10.9% and 11.2%, and Delta T (sol) was 14.4 and 15.2%, respectively.
机译:作为无机功能材料,预计VO2薄膜将用于智能窗户。然而,当VO2的相转变温度(TC)约为68A℃时,这些薄膜不利于实际应用,其大于室温。为了减少Tc,研究了Zr4 +掺杂对VO2薄膜结构和性质的影响。使用溶胶 - 凝胶工艺,石英玻璃上旋涂,在氮气氛内的管炉中的525A℃下退火,制备薄膜。结果表明,这些薄膜在基材上具有高优先的晶体取向;然而,初级两个X射线衍射图案峰值略微向小角度偏移,当7.%Zr4 +在VO2膜中掺杂时,偏差角为0.16a,结晶尺寸约为98nm。在纯VO2薄膜的表面上发现大量晶粒,但Zr4 +掺杂膜的所有Zr4 +掺杂膜具有分层结构,并且膜的厚度约为200nm。使用差示扫描量热法表征了这些薄膜的Tc,并且使用UV-Vis-Nir分光光度计表征了发光和太阳透射率,其表明Zr4 +掺杂的效果降低了Tc每1℃的约1a℃。%平均值,7at。%薄膜的Tc略大于5at。%膜,其相转变温度为61.4A℃。随着掺杂浓度增加,透射率降低,1。 %Zr4 +掺杂增加了发光调节效率(Delta T(Lum))和太阳能调制效率(ΔT(溶胶))。纯VO2膜的δT(LUM)和1at。%Zr4 +掺杂的VO2薄膜为10.9%和11.2%,分别为14.4和15.2%。

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