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首页> 外文期刊>Journal of Electronic Materials >Analytical Modeling of Acoustic Phonon-Limited Mobility in Strained Graphene Nanoribbons
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Analytical Modeling of Acoustic Phonon-Limited Mobility in Strained Graphene Nanoribbons

机译:应变石墨烯纳米中声子位音势型流动性的分析建模

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Recent advances in graphene nanoribbon-based electronic devices encourage researchers to develop modeling and simulation methods to explore device physics. On the other hand, increasing the operating speed of nanoelectronic devices has recently attracted significant attention, and the modification of acoustic phonon interactions because of their important effect on carrier mobility can be considered as a method for carrier mobility optimization which subsequently enhances the device speed. Moreover, strain has an important influence on the electronic properties of the nanoelectronic devices. In this paper, the acoustic phonons mobility of armchair graphene nanoribbons (n-AGNRs) under uniaxial strain is modeled analytically. In addition, strain, width and temperature effects on the acoustic phonon mobility of strained n-AGNRs are investigated. An increment in the strained AGNR acoustic phonon mobility by increasing the ribbon width is reported. Additionally, two different behaviors for the acoustic phonon mobility are verified by increasing the applied strain in 3m, 3m + 2 and 3m + 1 AGNRs. Finally, the temperature effect on the modeled AGNR phonon mobility is explored, and mobility reduction by raising the temperature is reported.
机译:基于Graphene纳米波纹电子设备的最新进展鼓励研究人员开发探索设备物理的建模和仿真方法。另一方面,增加纳米电子器件的操作速度最近引起了显着的关注,并且由于它们对载流子迁移率的重要影响而改变声子相互作用可以被认为是用于载流子迁移率优化的方法,随后提高了装置速度。此外,应变对纳米电子器件的电子性质具有重要影响。在本文中,在单轴菌株下的扶手椅石墨烯纳米(N-AGRS)的声学声子迁移性被分析模拟。另外,研究了对应变N-AGNRS的声学声子迁移率的应变,宽度和温度效应。报道了通过增加带状宽度的应变AGNR声学声子迁移率的增量。另外,通过增加3M,3M + 2和3M + 1 AGNRS的施加应变来验证用于声学声子迁移率的两个不同行为。最后,探讨了对建模的AGNR源性迁移率的温度效应,并报告了通过提高温度的移动性降低。

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