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首页> 外文期刊>Journal of Electronic Materials >Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods
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Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

机译:铬掺杂剂对ZnO纳米棒紫外光反应性的影响

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Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).
机译:结构和裸ZnO纳米棒,ZnO的包封ZnO纳米棒的光学性质,和Cr掺杂的ZnO包封的氧化锌纳米棒进行了研究。封装的ZnO纳米棒用在其中ZnO纳米棒被首先生长在玻璃基板上直接从水热浴,然后通过浸涂薄层Cr掺杂的ZnO的包封一个简单的两阶段法生长。的X射线衍射图案比较研究表明,铬被成功地结合到ZnO纳米棒的壳层。另外,能量色散X射线光谱法确认该样品中的Cr的存在。据观察,围绕ZnO纳米棒的芯壳层的厚度为至少约20nm。透射电子裸ZnO纳米棒的显微术显示的单晶结构。基于光学的结果,两者封装过程和Cr添加掺杂剂的样品的光带隙减小。事实上,Cr掺杂的ZnO封装ZnO纳米棒,ZnO的包封ZnO纳米棒,和裸ZnO纳米棒的光学带隙值分别为2.89电子伏特,3.15电子伏特,和3.34电子伏特。紫外线(UV)参数表明,铬掺杂剂掺入ZnO的壳层纳米棒大大促进光生载流子的形成和运输,优化它们的性能作为一个实际UV检测器。其结果是,将Cr掺杂的ZnO包封的氧化锌纳米棒的光电流为最高(0.6毫安)中,用ZnO的包封ZnO纳米棒和裸ZnO纳米棒(0.21 mA和0.06毫安,分别地)进行比较。

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