首页> 外文期刊>Journal of Electronic Materials >An Investigation of Dielectric, Piezoelectric Properties and Microstructures of Bi0.5Na0.5TiO3-BaTiO3-Bi0.5K0.5TiO3 Lead-Free Piezoelectric Ceramics Doped with K2AlNbO5 Compound
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An Investigation of Dielectric, Piezoelectric Properties and Microstructures of Bi0.5Na0.5TiO3-BaTiO3-Bi0.5K0.5TiO3 Lead-Free Piezoelectric Ceramics Doped with K2AlNbO5 Compound

机译:介质,压电性能和施联的微观结构研究.5NA0.5TiO3-Bi0.5K0.5k0.5TiO3掺杂K2Alnbo5化合物的无铅压电陶瓷

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摘要

The effect of K2AlNbO5 compound acting as both donor and accepter on the phase, microstructures and electrical properties of the 0.9362(Bi0.5Na0.5)TiO3-0.0637BaTiO(3)-0.02(Bi0.5K0.5)TiO3 [(1-x)(0.9163BNT-0.0637BT-0.02BKT)-x(K2AlNbO5)] (BNKBT-1000xKAN) ternary lead-free piezoelectric ceramics was systematically investigated. When doping content of K2AlNbO5 was varied from 0 to 0.009, the BNKBT-1000xKAN ceramics showed a single perovskite structure, and the phase structure transferred from a rhombohedral-tetragonal coexistent morphotropic phase boundaries zone to a tetragonal zone. The x-ray photoelectron spectroscopy analysis indicated that the chemical valence of the Nb and Al element are 5+ and 3+, respectively. Strong relaxor characteristics were revealed by the temperature-dependent dielectric properties of the ceramics. Typical square polarization-electric field (P-E) hysteresis loops were observed in the samples with doping content lower than 0.005. However, with further increasing the doping content (x = 0.007 and 0.009), round P-E hysteresis loops were observed due to the high conductivity of these samples. Moreover, when the doping content was less than 0.005, the ceramic samples exhibited good piezoelectric properties. Specially, when the doping content was 0.001, the piezoelectric constant d (33) and electromechanical coupling coefficient k (p) of the sample were 197 pC/N and 22%, respectively. However, further addition would deteriorate both the dielectric and piezoelectric properties.
机译:K2ALNBO5化合物作用作为供体和Accepter的效果在0.9362(Bi0.5Na0.5)TiO3-0.0637batiO(3)-0.02(Bi0.5k0.5)TiO3 [(1- X)(0.9163bnt-0.0637bt-0.02bkt)-x(k2alnbo5)](bnkbt-1000xkan)系统地研究了三元无铅压电陶瓷。当K2AlnBO5的掺杂含量为0至0.009时,BNKBT-1000XKAN陶瓷显示出单一的钙钛矿结构,并且从菱面向四方共存Morphotopic相界区转移到四方区的相结构。 X射线光电子体光谱分析分析表明,Nb和Al元素的化学价分别为5 +和3+。通过陶瓷的温度依赖性介电性能揭示了强大的松弛剂特性。在掺杂含量低于0.005的样品中观察典型的方偏振电场(P-E)滞后环。然而,通过进一步增加掺杂含量(X = 0.007和0.009),由于这些样品的高导电性,观察到圆形的P-E滞后环。此外,当掺杂含量小于0.005时,陶瓷样品表现出良好的压电性能。特别地,当掺杂含量为0.001时,样品的压电常数D(33)和样品的机电耦合系数K(P)分别为197pc / n和22%。然而,进一步添加将劣化介电和压电性质。

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