Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio

摘要

We present silicon-compatible tunnel dielectric field-effect transistors with strong negative differential resistance. On-state tunneling currents have been improved and fully suppressed ambipolarity with lowest subthreshold slope (SS) 10 mV/dec. In addition to the TFET mode, our device works as the negative transconductance characteristic that produces a high current peak-to-valley current ratio (PVR) (up to 10(7)). Numerical simulations demonstrate the impact of tunnel dielectric layer thickness, gate oxide thickness and temperature on the PVR. With the significant improvement in SS, on-state current and high PVR, this tunnel dielectric transistor provides an effective technique for enhancing the drive current, and realizes its applications in logic and memory circuits.