Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device

摘要

Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnSx have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnSx and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300A degrees C to 400A degrees C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.