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首页> 外文期刊>Journal of Electronic Materials >Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure
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Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure

机译:球栅阵列结构中SNAGCU / SNPB混合焊接过程的故障机理

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摘要

In this study, the influence of different reflow profiles and dosages of SnPb solder paste on the reliability of the SnAgCu/SnPb mixed assembly process was investigated. The interfacial microstructures were carefully examined through scanning electron microscopy, and two failures modes were found. Firstly, when reflowed at 245 degrees C for 95 s, Pb-rich phases were buried within an intermetallic compound (IMC) layer and led to micro-voids and cracks under thermal stress or mechanical stress. However, upon increasing the reflow temperature or time further led to melting the solder ball totally, and the Pb element dissolved into a liquid phase and precipitated into uniform and small granules during the cooling process. Further, among the samples with different dosages of SnPb solder paste, severe shrinkage occurred at the solder joints with the addition of 12 wt.% eutectic SnPb component. Electron back-scattered diffraction analysis was conducted in order to determine the mechanism of different shrinkages. The solder ball consisted of several primary Sn grains, and the shrinkage and Pb-rich phase are preferred to appear at the grain boundary. When the solder ball consisted of a single grain, no preferred orientation of the shrinkage and Pb-rich phase were detected. The shrinkage appeared at the final solidification region, which is near the IMC layer. Moreover, the shrinkages connect to each other, and a continuous crack formed on the chip side, leading to the failure.
机译:在该研究中,研究了SNPB焊膏对SNPB焊膏的影响对SNAGCU / SNPB混合组装过程的可靠性的影响。通过扫描电子显微镜仔细检查界面微观结构,并发现两个故障模式。首先,当在245℃下回流95℃时,将富含Pb的相埋在金属间化合物(IMC)层内,并在热应力或机械应力下被导致微空隙和裂缝。然而,在增加回流温度或时间进一步导致完全熔化焊球,并且Pb元素溶解在液相中并在冷却过程中沉淀成均匀和小颗粒。此外,在具有不同剂量的SNPB焊膏剂中的样品中,在焊点中发生严重收缩,并加入12重量%。%共晶SNPB组分。进行电子背散衍射分析以确定不同收缩的机制。由几个主要Sn晶粒组成的焊球,并且优选富含收缩和富含PB的相位。当焊球由单颗粒组成时,检测到收缩率和富含PB的相的优选取向。收缩出现在最终凝固区域,其在IMC层附近。此外,收缩差距彼此连接,并且在芯片侧形成的连续裂缝,导致故障。

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