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Spray Deposition of n-type Cobalt-Doped CuO Thin Films: Influence of Cobalt Doping on Structural, Morphological, Electrical, and Optical Properties

机译:N型钴掺杂CuO薄膜的喷雾沉积:钴掺杂对结构,形态,电气和光学性质的影响

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摘要

The effects of cobalt (Co)-doping (0 at%, 2 at%, 4 at%, 6 at%, and 10 at%) on the structural, morphological, electrical, and optical characteristics of spray-deposited nanostructured copper oxide (CuO) thin films were investigated. X-ray diffraction patterns revealed that the crystallite size is subject to a constant reduction with an increase in the doping concentration. Based on field-emission scanning electron microscopy images, no change was observed for the grain shapes; however, the grain size decreased with an increase in the doping concentration. Furthermore, doping Co led to a conversion from a fairly weak p-type conductivity for the undoped CuO thin film (3.42 x 10(-4) omega cm) to a considerable n-type conductivity for the 10 at% Co-doped CuO (CuO:Co) film (4.20 x 10(-1) omega cm). Although the mobility of the resulting films decreased with Co doping, it seems that the significant enlargement in free electron carrier concentration is responsible for conductivity transition and improvement. Finally, the bandgap values were estimated using experimental data of transmittance and reflectance.
机译:的钴(Co)的掺杂(0原子%,2原子%,4原子%,6原子%,10原子%)上喷涂沉积纳米结构氧化铜的结构,形态,电气和光学特性(的效果的CuO)薄膜进行了研究。 X射线衍射图案,发现该微晶尺寸是受a恒定减少与增加的掺杂浓度。基于场致发射扫描电子显微镜图像,没有观察到变化的颗粒形状;然而,晶粒尺寸的增加的掺杂浓度下降。此外,掺杂钴导致转换从所述未掺杂的CuO薄膜(3.42×10(-4)的ω厘米)至%的Co掺杂的CuO相当n型导电性的10相当弱p型导电性(的CuO:Co)的膜(4.20×10(-1)的ω厘米)。虽然所得的膜的流动性用Co掺杂下降,它似乎在自由电子载流子浓度的显著放大负责导电性的过渡和改进。最后,带隙值使用的透射率和反射率的实验数据估计。

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