Void Formation and Intermetallic Growth in Pulse Electrodeposited Cu-Sn Layers for MEMS Packaging

摘要

Electrodeposited copper (Cu)-tin (Sn) based solid-liquid interdiffusion (SLID) bonding is becoming popular in wafer-scale packaging of inertial Micro-Electro-Mechanical-Systems (MEMS) sensors due to its inherent advantages of lower cost, low processing temperatures and less stringent surface uniformity requirements. However, eliminating micron-size voids within intermetallic compounds (IMCs) and bond interfaces has remained a challenging task. The present study focuses upon IMC growth and void formation at varying temperatures and times. Stacks of varying thickness of Cu and Sn were fabricated by electrodeposition, and the samples were annealed at temperature ranging up to 300 degrees C. Scalloped shaped Cu6Sn5 (eta-phase) and comparatively uniform Cu3Sn (epsilon-phase) intermetallics were observed. Experimental results show that the growth of metastable Cu6Sn5 dominates IMC formation at lower temperatures but as temperature increases, Cu3Sn dominates over the Cu6Sn5 growth. This IMC growth transition from Cu6Sn5 dominant growth to Cu3Sn dominant growth depends on the annealing temperature and has a critical time duration. The IMC thicknesses are compared with those obtained by numerical simulation models. For given annealing temperatures, intermittent voids formed in the IMC layers show increasing size and decreasing void fraction trends with increasing annealing times. The results suggest that Cu-Sn SLID bonding performed at 275 degrees C yields reliable bonding since the void growth is minimal. Based on these results, a test vehicle containing a kelvin structure and daisy chains (having large number of Cu-Sn bonded structure), was fabricated, resulting in electrical resistances lower than 30 m-ohms and 6 ohms, respectively.