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首页> 外文期刊>Journal of Electronic Materials >Synthesis, Characterization, DFT Studies, and Photodiode Application of Azo-azomethine-Based Ligand and Its Transition-Metal Complexes
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Synthesis, Characterization, DFT Studies, and Photodiode Application of Azo-azomethine-Based Ligand and Its Transition-Metal Complexes

机译:基于偶氮二甲胺基配体及其过渡金属配合物的合成,表征,DFT研究和光电二极管应用

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摘要

An azo-azomethine-based ligand (H2L) and its transition-metal complexes were prepared, and the electronic structure of the synthesized compounds obtained computationally using density functional theory at B3LYP/6-31G (d,p) level. Furthermore, organic-inorganic heterojunctions were fabricated by forming thin films of complexes of H2L and Co(II), Ni(II), and Pd(II) metal on n-Si substrate. The fundamental electrical parameters of the rectifying heterojunctions were identified based on current-voltage data obtained in the dark at room temperature. The photosensing properties of the devices were investigated under illumination at various intensities from 40 mW/cm(2) to 100 mW/cm(2). The results showed that the photoelectrical characteristics of the devices could be modified by the thin film of metal complex, with the best photosensing properties being obtained for the heterojunction based on compound 1.
机译:制备偶氮 - 偶氮胺的配体(H2L)及其过渡金属配合物,并在B3LYP / 6-31G(D,P)水平下使用密度官能理论计算的合成化合物的电子结构。 此外,通过在N-Si衬底上形成H 2L和CO(II),Ni(II)和Pd(II)金属的络合物的薄膜来制造有机无机杂疾病。 基于在室温下在黑暗中获得的电流 - 电压数据来识别整流异质结的基本电气参数。 在从40mW / cm(2)至100mW / cm(2)的各种强度下的照明下研究了器件的光敏性质。 结果表明,基于化合物1,可以通过金属络合物的薄膜改变装置的光电特性,基于化合物1的异质结来获得最佳的光胶质性能。

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