Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy

摘要

The trench gate structure is one of the promising techniques to reduce on-state resistance (R (on)) for silicon power devices, such as insulated gate bipolar transistors and power metal-oxide-semiconductor field-effect transistors. In addition, it has been reported that stress is induced around the trench gate area, modifying the carrier mobilities. We evaluated the one-dimensional distribution and anisotropic biaxial stress by quasi-line excitation and water-immersion Raman spectroscopy, respectively. The results clearly confirmed anisotropic biaxial stress in state-of-the-art silicon power devices. It is theoretically possible to estimate carrier mobility using piezoresistance coefficients and anisotropic biaxial stress. The electron mobility was increased while the hole mobility was decreased or remained almost unchanged in the silicon (Si) power device. The stress significantly modifies the R (on) of silicon power transistors. Therefore, their performance can be improved using the stress around the trench gate.