机译:通过脉冲激光沉积制备的P型Na掺杂ZnMGO薄膜Na受体水平的研究
Zhejiang Univ Sch Mat Sci &
Engn Cyrus Tang Ctr Sensor Mat &
Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn Cyrus Tang Ctr Sensor Mat &
Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn Cyrus Tang Ctr Sensor Mat &
Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn Cyrus Tang Ctr Sensor Mat &
Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn Cyrus Tang Ctr Sensor Mat &
Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
ZnMgO film; p-type doping; acceptor level; photoluminescence;
机译:通过脉冲激光沉积制备的P型Na掺杂ZnMGO薄膜Na受体水平的研究
机译:通过脉冲激光沉积实现Na掺杂的p型非极性a平面Zn_(1-x)Cd_xO膜
机译:以Li为掺杂源的脉冲激光沉积法制备p型ZnMgO薄膜
机译:紫立岩结构高Mg含量ZnMGO薄膜沉积氧等离子体增强脉冲激光沉积
机译:通过脉冲激光沉积制备的氧化物薄膜的可湿性:新见解。
机译:脉冲激光沉积制备6H-SiC(0001)衬底上VO2薄膜的增强的相变特性
机译:脉冲激光沉积制备Ba(Mg1 / 3Ta2 / 3)O3薄膜的特性及其对Pb(Zr1-xTix)O3薄膜生长的影响