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首页> 外文期刊>Journal of Electronic Materials >Low-Temperature Cu-Cu Bonding Process Based on the Sn-Cu Multilayer and Self-Propagating Reaction Joining
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Low-Temperature Cu-Cu Bonding Process Based on the Sn-Cu Multilayer and Self-Propagating Reaction Joining

机译:基于SN-Cu多层的低温Cu-Cu键合工艺和自展反反应接合

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摘要

Transient liquid phase bonding can be realized at a relatively low temperature through building an intermetallic interconnection. A self-propagating reaction joint can achieve a low temperature bond by confining the heat at the bonding interface and reduce the thermal effect on other components. In this work, a Sn-Cu alternating multilayer was combined with an Al-Ni self-propagating reaction joint to develop a highly efficient low-temperature Cu-Cu hybrid bonding process. The Sn-Cu alternating multilayer was directly prepared on the Cu substrates by an alternating electroplating process. The Al-Ni multilayer film was sandwiched between two Cu substrates under a pressure of 5MPa and ignited with a 15-V spark at room temperature. Cu-Cu bonds with three different Sn/Cu thickness ratios were studied. It was found that the Cu6Sn5 layer within the three Sn layers had different thicknesses and decreased with increasing distance from the heat source of the Al-Ni nanofoil. The thickness difference between adjacent Cu6Sn5 layers at first decreased with the increasing Sn/Cu thickness ratio in these three groups and then remained constant. The shear strength of the bonds varied with the thickness of Cu6Sn5 layer and achieved a high shear strength with a Sn/Cu thickness ratio of 1.6m/1m, where fracture occurred within the Cu6Sn5 layer near the Cu substrate. The combination of the Sn-Cu multilayer and self-propagating reaction joining process can achieve a good low-temperature bond between Cu substrates with an optimized Sn/Cu thickness ratio, which has a strong influence on the quality of bonds, the Cu6Sn5 morphology, and shear strength.
机译:瞬态液相键合可以在相对低的温度下通过构建金属间互连来实现。通过在粘合界面处限制热量并降低其他组分的热效应,自吞展反应接头可以通过限制热效应来实现低温键。在这项工作中,将Sn-Cu交替的多层与Al-Ni自播反应接头组合以显现高效的低温Cu-Cu混合键合工艺。通过交流电镀方法直接在Cu基板上直接制备Sn-Cu交替多层。在5MPa的压力下,Al-Ni多层膜在两个Cu基材之间夹在两个Cu基材之间,并在室温下用15V火花点燃。研究了具有三种不同Sn / Cu厚度比的Cu-Cu键。发现三个Sn层内的Cu6Sn5层具有不同的厚度,并且随着距Al-Ni纳米罐的热源的距离增加而降低。相邻的Cu6Sn5层之间的厚度差在这三个基团中的不断增加的Sn / Cu厚度比下降,然后保持恒定。粘合剂的剪切强度随Cu6Sn5层的厚度而变化,并且通过Sn / Cu厚度比为1.6m / 1m的高剪切强度,其中在Cu衬底附近的Cu6Sn5层内发生断裂。 Sn-Cu多层和自展反反应接合过程的组合可以在Cu衬底之间具有优化的Sn / Cu厚度比的良好的低温键,这对键的质量有很大影响,Cu6Sn5形态,和剪切力量。

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  • 来源
    《Journal of Electronic Materials》 |2019年第2期|共8页
  • 作者单位

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Digital Mfg Equipment &

    Technol Wuhan 430074 Hubei Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;材料;
  • 关键词

    Low-temperature Cu-Cu bonding; self-propagating reaction joining; Sn-Cu alternating multilayer; Cu6Sn5 IMC layer; shear strength;

    机译:低温Cu-Cu键合;自蔓延反应连接;Sn-Cu交替多层;CU6SN5 IMC层;剪切强度;

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