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首页> 外文期刊>Journal of Colloid and Interface Science >MoS2 decorated CdS hybrid heterojunction for enhanced photoelectrocatalytic performance under visible light irradiation
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MoS2 decorated CdS hybrid heterojunction for enhanced photoelectrocatalytic performance under visible light irradiation

机译:MOS2装饰CDS混合异质结,可在可见光照射下提高光电催化性能

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摘要

Pervious photocatalysis application of nanostructured suspensions reveals high recombination rates of photogenerated electron-hole pairs, low recycling efficiency and secondary pollution problems. Herein, MoS2@CdS nanocomposites thin films on FTO (fluorine-doped tin oxide) substrates are fabricated using facile electrodeposition by decorating a layer of highly-active MoS2 cocatalyst on CdS film to optimize the interface modification. The hybrid film exhibits enhanced photoelectrocatalytic activity compared to pristine CdS film. The synthesized CdS exhibits a bandgap of 2.42 eV with the conduct band at ca. -0.25 V vs. RHE, while MoS2 reveals a bandgap of 1.73 eV with the valance band at ca. 1.59 V vs. RHE. The appropriate band alignment between the hybrid films favours the electrons transfer thus the charge recombination are suppressed. The MoS2@CdS film yields a highest photocurrent of 15.2 mA/cm(2) at 0 V vs. Ag/AgCl under visible light illumination (lambda = 420 nm), exhibiting a 5.2 times enhancement as compared to that of CdS film (2.9 mA/cm(2)). The structural integration of MoS2 with CdS will be a promising strategy to develop a high-efficient and low-cost non-noble metal cocatalyst for solar energy conversion. (C) 2018 Elsevier Inc. All rights reserved.
机译:纳米结构悬浮液的透视光催化施用揭示了光生电子空穴对,低回收效率和二次污染问题的高重组率。这里,通过在CDS膜上装饰一层高活性MOS2助催化剂来制造FTO(氟掺杂氧化锡)基板上的MOS2纳米复合材料在CDS膜上的高度活性MOS2助催化剂中来制造薄膜以优化界面改性。与原始CD膜相比,杂化膜表现出增强的光电催化活性。合成的CD在CA时显示出2.42eV的带隙。 -0.25 V与RHE,而MOS2显示在CA的符距带有1.73eV的带隙。 1.59 V与Rhe。混合膜之间的适当的带对准使电子转移抑制了电荷重组。 MOS2 @ CDS膜在可见光照明(Lambda&gt. = 420nm)下,在0V与Ag / AgCl下产生15.2mA / cm(2)的最高光电流,与CDS膜相比,增强5.2倍的增强(2.9 mA / cm(2))。 MOS2与CD的结构集成将是开发用于太阳能转换的高效和低成本的非贵金属助催化剂的有希望的策略。 (c)2018 Elsevier Inc.保留所有权利。

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