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Effect of annealing temperature on the growth of Zn-Sn-O nanocomposite thin films

机译:退火温度对Zn-SN-O纳米复合薄膜生长的影响

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摘要

The Zn-Sn-O (ZTO) nanocomposite thin films were annealed at 300-1000 degrees C to study the annealing temperature effects on the film optical and structural properties. The XRD analysis shows that the films composition largely depends on the annealing temperature. The spinel zinc stannate Zn2SnO4 was obtained from 400 to 700 degrees C, the perovskite-type zinc stannate ZnSnO3 appeared at 800 degrees C, and the Zn2SiO4 can be generated only above 1000 degrees C. In addition, lattice parameter, grain size and microstrain were investigated to understand the influence of annealing temperature on the film property. The average transmittance of the ZTO films is among 80%-96%, and the film optical band gap increases from 3.55 to 4.09 eV with temperature increases from 300 to 1000 degrees C. First-principles calculation confirms that the band gap increase can be ascribed to the phase transition from Zn2SnO4 to ZnSnO3. Our work suggests that the ZTO film property can be well engineered by controlling the annealing temperature. (C) 2017 Elsevier B.V. All rights reserved.
机译:Zn-Sn-O(ZTO)纳米复合薄膜在300-1000℃下退火,以研究对膜光学和结构性能的退火温度效应。 XRD分析表明,薄膜组合物在很大程度上取决于退火温度。尖晶石锌静脉Zn2SNO4得到400至700℃,钙钛矿型锌锡汀ZnSNO3出现在800℃,Zn2SiO4只能产生在1000℃以上。另外,晶格参数,晶粒尺寸和微陶器调查以了解退火温度对薄膜性能的影响。 ZTO膜的平均透射率在80%-96%之间,薄膜光学带隙从3.55到4.09eV增加,温度从300到1000摄氏度增加。第一原理计算证实可以归属带隙增加从zn2sno4到znsno3的相位转变。我们的工作表明,通过控制退火温度,可以充分设计ZTO薄膜性能。 (c)2017年Elsevier B.V.保留所有权利。

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