首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Preparation of polymer-derived graphene-like carbon-silicon carbide nanocomposites as electromagnetic interference shielding material for high temperature applications
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Preparation of polymer-derived graphene-like carbon-silicon carbide nanocomposites as electromagnetic interference shielding material for high temperature applications

机译:聚合物衍生石墨烯碳 - 碳化物纳米复合材料的制备作为高温应用的电磁干扰屏蔽材料

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In this study, we used divinyl benzene (DVB) to modify a polycarbosilane precursor via chemical modification in order to fabricate homogenous graphene-like carbon-silicon carbide (C-SiC) nano composites. The electromagnetic interference shielding effectiveness (EMI SE) of the composites was tested over the temperature range from room temperature (RT) to 600 degrees C in air. With increasing DVB content, the conductivity increased due to the lower degree of defects and the better connectivity of the carbon phase, whereas both the oxidation resistance and the EMI SE of the nanocomposites decreased. The results suggest that the degree of defects has a much stronger influence on the EMI SE than the conductivity. Possessing the highest degree of defects and best oxidation resistance, the C-SiC nano composites with a carbon mass percentage of 7.6 wt% showed the highest EMI SE both at RT and 600 degrees C, indicating that they are a promising candidate for an application as shielding material at high temperatures in air. (C) 2017 Elsevier B.V. All rights reserved.
机译:在该研究中,我们使用二乙烯基苯(DVB)通过化学改性来改变聚碳硅烷前体,以制造均匀的石墨烯样碳 - 碳化物(C-SiC)纳米复合材料。复合材料的电磁干涉屏蔽效果(EMI SE)在空气中从室温(RT)至600℃的温度范围内测试。随着DVB含量的增加,由于较低程度的缺陷和碳阶段的连接性更好,导电率增加,而氧化性耐氧化和纳米复合材料的EMI SE均降低。结果表明,缺陷程度对EMI SE产生了更强烈的影响而不是电导率。具有最高程度的缺陷和最佳抗氧化性,具有7.6wt%的碳质量百分比的C-SiC纳米复合材料在室温和600℃下显示出最高的EMI SE,表明它们是应用的有希望的候选者在空气中的高温下屏蔽材料。 (c)2017年Elsevier B.V.保留所有权利。

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