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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Spray deposition of V4O9 and V2O5 thin films and post-annealing formation of thermochromic VO2
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Spray deposition of V4O9 and V2O5 thin films and post-annealing formation of thermochromic VO2

机译:V4O9和V2O5薄膜的喷涂沉积和热致变色VO2的退火形成

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摘要

Vanadium oxide (VOx) thin films were deposited at various substrate temperatures (T-s) by spray pyrolysis technique using 0.05 M vanadyl acetylacetonate precursor. V4O9 films are formed at T-s = 300 degrees C, while mixed V2O5 phases are formed at higher T-s (400 and 500 degrees C). Annealing in forming gas of V4O9 films shows the formation of higher content of thermochromic VO2 phase than V2O5 films. V4O9 films show little higher electric resistivity (rho), higher temperature coefficient of resistance (TCR), and higher thermal carrier activation energy (E-a) than V2O5 films. Annealed VOx films show a 2-3 order of magnitude change in rho, optical transmission switch of 19-39%, and higher E-a than the as deposited films. Annealed films deposited at T-s = 500 degrees C presents a high TCR of -4.6%K-1. Optical absorption, electronic transitions, and energy gaps of the formed VOx phases have been discussed in relation to its electronic band structure. (C) 2017 Elsevier B.V. All rights reserved.
机译:使用0.05M乙酰丙酮前体的喷雾热解技术,在各种基板温度(T-S)处沉积氧化钒(VOX)薄膜。在T-S = 300℃下形成V4O9膜,而混合的V2O5相以较高的T-S(400和500℃)形成。 V4O9膜的成形气体的退火显示了比V2O5膜的热致变色VO2相含量更高的形成。 V4O9薄膜显示出较高的电阻率(RHO),较高的温度系数(TCR),比V2O5薄膜更高的热载波激活能量(E-A)。退火型VOX薄膜显示RHO,光传输开关为19-39%的光传输开关,比沉积薄膜更高的换膜。沉积在T-S = 500摄氏度下的退火薄膜呈现-4.6%K-1的高TCR。已经相对于其电子带结构讨论了所形成的VOX阶段的光学吸收,电子转换和能量间隙。 (c)2017年Elsevier B.V.保留所有权利。

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