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机译:无定形Ingazno薄膜晶体管和逆变器的氧分压比调制电性能
Chuzhou Univ Sch Elect &
Elect Engn Chuzhou 239000 Peoples R China;
Anhui Univ Sch Phys &
Mat Sci Radiat Detect Mat &
Devices Lab Hefei 230039 Anhui Peoples R China;
Anhui Univ Sch Phys &
Mat Sci Radiat Detect Mat &
Devices Lab Hefei 230039 Anhui Peoples R China;
Anhui Univ Sch Phys &
Mat Sci Radiat Detect Mat &
Devices Lab Hefei 230039 Anhui Peoples R China;
Anhui Univ Sch Phys &
Mat Sci Radiat Detect Mat &
Devices Lab Hefei 230039 Anhui Peoples R China;
Chuzhou Univ Sch Elect &
Elect Engn Chuzhou 239000 Peoples R China;
Chuzhou Univ Sch Elect &
Elect Engn Chuzhou 239000 Peoples R China;
Sputtering; Oxygen partial pressure ratio; alpha-IGZO; Thin film transistors; Inverter;
机译:无定形Ingazno薄膜晶体管和逆变器的氧分压比调制电性能
机译:氧分压对溅射态非晶InGaZnO薄膜光学和电学性质的调制
机译:氧分压对非晶InGaZnO薄膜晶体管状态密度的影响
机译:通过将原位氮掺入非晶InGaZnO薄膜晶体管中提高电性能和光响应
机译:InGaZnO薄膜晶体管的后处理,以改善偏置照明应力的可靠性。
机译:具有高性能和超薄厚度的低温可加工非晶InGaZnO薄膜晶体管的周期性脉冲湿退火方法
机译:栅极氧化物材料对非晶Ingazno薄膜晶体管电性能的影响:分析调查