首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Lattice distortion modified anisotropic magnetoresistance in epitaxial La_(0.67)Sr_(0.33)MnO_3 thin films
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Lattice distortion modified anisotropic magnetoresistance in epitaxial La_(0.67)Sr_(0.33)MnO_3 thin films

机译:晶格畸变在外延LA_(0.67)SR_(0.33)MNO_3薄膜中改性各向异性磁阻

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摘要

Effects of lattice distortion on the anisotropic magnetoresistance (AMR) of magnetron sputtered epitaxial La_(0.67)Sr_(0.33)MnO_3 (LSMO) thin films grown on (001)-oriented SrTiO_3 and MgO substrates were investi?gated. Lattice mismatch at the film/substrate interface gives rise to weak and strong lattice distortion of the LSMO/SrTiO_3 and LSMO/MgO films, respectively. The Jahn-Teller electron-phonon coupling in LSMO leads to significant localization of the eg electrons, causing smaller magnetization, lower transition temperatures (T_C T_(mi)) and larger resistivity. Moreover, AMR of the LSMO films show strong correlations with the substrates. Only two-fold symmetric AMR can be observed in the LSMO/SrTiO_3 films. However, the AMR curves ofthe LSMO/MgO system show clear transitions between two- and four-fold symmetry. This behavior is ascribed to the lattice distortion in the LSMO films which enhances the magneto-crystalline anisotropy.
机译:晶格变形对(0.67)SR_(0.33)MnO_3(LSMO)薄膜在(001)的SRTIO_3和MgO基板上生长的磁控溅射外延La_(0.67)SR_(0.33)MnO_3(LSMO)薄膜的影响。 薄膜/衬底界面的晶格失配分别产生了LSMO / SRTIO_3和LSMO / MGO膜的弱和强的晶格变形。 LSMO中的Jahn-Teller电子 - 声子耦合导致例如电子的显着定位,导致较小的磁化,较低的过渡温度(T_C T_(MI))和更大的电阻率。 此外,LSMO薄膜的AMR与基材显示出强烈的相关性。 在LSMO / SRTIO_3薄膜中可以观察到两倍对称AMR。 然而,LSMO / MGO系统的AMR曲线显示出两倍和四倍对称之间的透明过渡。 这种行为归因于LSMO薄膜中的晶格变形,其增强磁性晶体各向异性。

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