<![CDATA[Enhancement of breakdown electric field and DC bias of (In <ce:inf loc='post'>0.5</ce:inf>Nb <ce:inf loc='post'>0.5</ce:inf>) <ce:inf loc='post'>0.005</ce:inf>(Ti <ce:inf loc='post'>1-x</ce:inf>Zr <ce:inf loc='post'>x</ce:inf>) <ce:inf loc='post'>0.995</ce:inf>O <ce:inf loc='post'>2</ce:inf> colossal permittivity ceramics]]>
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0.5Nb 0.5) 0.005(Ti 1-xZr x) 0.995O 2 colossal permittivity ceramics]]>

机译:<![CDATA [击穿电场和DC偏差的增强(在 0.5 NB 0.5 0.005 (TI 1-X ZR 0.995 O 2 巨大允许陶瓷]]>

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AbstractIn, Nb, and Zr co-doped TiO2((In0.5Nb0.5)0.005(Ti1-xZrx)0.995O2) (x?=?0–0.80) ceramics were prepared by a solid-state reaction method, and their structures, dielectric properties, and response to DC bias were studied. The solubility limit was found to be near x?=?0.10, and the excess added Zr was present in the form of secondary ZrTiO4phase. The mean grain size increased from 20.2 to 39.5?μm in the x?=?0–0.10 range and then decreased to 5.2?μm for x?=?0.20. Permittivity at 1?kHz exceeded 104for the samples in the x?=?0–0.20 range and then decreased to 570 for x?=?0.40. For x?=?0.20, the ceramic sample showed εr?≈?104and tanδ?≤?0.05 (20?Hz–100?kHz), as well as good temperature (?150 to 125?°C) and DC bias (0–875?v/cm) stability. The breakdown electric field increased from 940?v/cm for x?=?0 to 5770?v/cm for x?=?0.20. The excellent dielectric properties are attributed to the coexistence of smaller grains and the presence of insulating ZrTiO4in the sample.Graphical abstractDisplay OmittedHighlights?The ((In0.5Nb0.5)0.005(Ti1-xZrx)0.995O2) (x?=?0–0.80) ceramics have been investigated.?For x?=?0.20 samples: εr?≈?104, tanδ??Good properties were related to smaller grains and insulating ZrTiO4.]]>
机译:<![CDATA [ 抽象 IN,NB和ZR共掺杂TIO 2 ((在 0.5 NB 0.5 0.005 (TI 1-X ZR X 0.995 o 2 )(x?= 0-0.80)陶瓷由a制备研究了固态反应方法及其结构,介电性能和对DC偏差的响应。发现溶解度限制在X =Δ= 0.10附近,并且过量添加的Zr以仲ZrTiO 4 相。在x = 0-0.10范围内,平均晶粒尺寸从20.2至39.5?μm增加到μm,然后减少到5.2?μmfor x?= 0.20。在1?kHz的介电常数超过10 4 用于x的样本=Δ0-0.20范围,然后减少到x?= 0.40。对于x?=?0.20,陶瓷样品显示ε R ?≈1s10 4 和Tanδ?≤α≤0.05(20℃-100?KHz),以及良好的温度(α150至125℃)和直流偏置(0-875〜v / cm)稳定性。击穿电场从940?v / cm增加到x?= 0到5770?v / cm for x?=?0.20。优异的介电性质归因于较小颗粒的共存和绝缘ZrTiO的存在 4 在样品中。 图形抽象 显示省略 亮点 < ce:para id =“p0010”查看=“全部”>((在 0.5 NB 0.5 0.005 (ti 1-x zr x 0.995 O 2 )(X?= 0-0.80)陶瓷已经研究过。 x?=?0.20样本:ε R ?≈10 4 ,tanδ?<?0.05,bds?= ?5770?v / cm。 良好的属性与较小的谷物和绝缘zrtio 4 ]]>

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