Photoemission studies on (1 1 1) textured Cr doped Eu <ce:inf loc='post'>2</ce:inf>O <ce:inf loc='post'>3</ce:inf> thin film
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Photoemission studies on (1 1 1) textured Cr doped Eu 2O 3 thin film

机译:PhotoEmission研究(1 1 1)纹理CR掺杂EU 2 O 3 薄电影

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AbstractThe electronic properties of (1 1 1) oriented Cr doped Eu2O3thin film has been studied using the x ray absorption and photoemission spectroscopic techniques. Cr-2pcore level XPS and Cr-Ledge XAS results confirm the 3+?ionic state of Cr, that precludes the formation of Cr metal clusters in the film. The modification in the electronic structure due to Cr doping is probed by the resonant photoemission spectroscopy measurements using variable photon energy sources at Eu 4d?→?4fand Cr 3p?→?3dphoto absorption region. The valence band spectra (at 145?eV) shows drastic change in the intensity of feature close to Fermi level along with an additional feature in Cr doped film when compared with the valence band spectra of the undoped film.Graphical abstractDisplay OmittedHighlights?Pulsed laser growth of Cr doped Eu2O3thin films.?Structural characterizations are carried out using XRD and Raman's spectroscopy measurements.?The ionic state of Cr is confirmed by the XPS and XAS measurements.?A drastic enhancement level is observed in the feature close to Fermi level.?Cr doping has induced magnetic ordering in the film.]]>
机译:<![CDATA [ 抽象 电子特性(1 1 1)取向Cr掺杂eu 2 O 3 使用X射线吸收和光电光谱技术研究了薄膜。 CR-2 P 核心水平XPS和CR- L 边缘XAS结果证实了3+?CR的离子状态,禁止形成电影中的Cr金属簇。由于CR掺杂引起的电子结构的修改是通过EU 4的可变光子能量源的谐振光曝光光谱测量来探讨 d →→4 f 和Cr 3 p ?→3 d 照片吸收区域。价带光谱(在145℃下)显示与未掺杂薄膜的价带光谱相比的CR掺杂膜中的特征强度的急剧变化。 图形抽象 显示省略 亮点 CR掺杂EU的脉冲激光生长 2 O 3 薄膜。 使用XRD和拉曼的光谱测量来执行结构特性。 通过XPS和XAS测量确认CR的离子状态。 a在接近Fermi级别的特征中观察到急剧增强水平。 Cr掺杂在电影中引起磁性排序。 ]]>

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