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机译:GaN编排和退火对SnO2薄膜的光电性质
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Nucl Solid State Phys Hubei Prov Wuhan 430072 Hubei Peoples R China;
Transparent conducting oxide; P-type SnO2 thin film; Codoping; E-beam evaporation; Conduction polarity;
机译:GaN编排和退火对SnO2薄膜的光电性质
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