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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Influence of bias voltage on the microstructure, mechanical and corrosion properties of AlSiN films deposited by HiPIMS technique
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Influence of bias voltage on the microstructure, mechanical and corrosion properties of AlSiN films deposited by HiPIMS technique

机译:偏压对Hipims技术沉积铝膜微观结构,机械和腐蚀性能的影响

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摘要

AlSiN films were deposited with various bias voltages ranging from 0 V to - 150 V by high power impulse magnetron sputtering (HiPIMS) technique. The effects of bias voltage on the microstructure, mechanical and corrosion behavior were investigated. The AlSiN films exhibited an over-stoichiometric N content and both cubic and hexagonal AlN were observed in films. All deposited films showed a typical surface feature of granular structure and the cross-sectional images exhibited that all films possessed columnar structure, which was changed from coarse columnar to denser columnar structure with increasing the bias voltage. The AlSiN film deposited at - 150 V possessed the densest structure and exhibited the best mechanical properties, including hardness, toughness and nano-wear resistance. The corrosion test showed that all coated samples had better corrosion resistance compared to SUS304 in 3.5 wt.% NaCl solution and the AlSiN film deposited at bias voltage of - 150 V possessed the best corrosion resistance due to denser microstructure, which could act as a barrier layer for blocking the diffusion of corrosive substances. (C) 2018 Elsevier B.V. All rights reserved.
机译:通过高功率脉冲磁控溅射(HIPIMS)技术,用各种偏置电压沉积Alsin薄膜,各种偏置电压范围为0V至-150V。研究了对微观结构,机械和腐蚀行为的偏置电压的影响。 Alsin膜表现出过化学计量的N含量,在薄膜中观察到立方和六边形ALN。所有沉积的薄膜显示出粒状结构的典型表面特征,并且横截面图像表现出所有薄膜具有柱状结构,其随着偏置电压的增加而从粗柱状变为密度柱状结构。沉积在-150V的Alsin薄膜具有密度最强的结构,并显示出最佳的机械性能,包括硬度,韧性和纳米耐磨性。腐蚀试验表明,与3.5重量%的SUS304相比,所有涂覆的样品具有更好的耐腐蚀性。%NaCl溶液和沉积在150V的偏置电压下沉积的Alsin膜具有由于密度微观结构引起的最佳耐腐蚀性,这可以充当屏障用于阻断腐蚀性物质的扩散的层。 (c)2018年elestvier b.v.保留所有权利。

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