机译:放电功率和硅含量对PECVD获得的富含碳无定形碳化硅膜的光学和力学性能的影响
Jilin Univ Coll Phys 2699 Qianjin St Changchun 130012 Jilin Peoples R China;
Jilin Univ Coll Phys 2699 Qianjin St Changchun 130012 Jilin Peoples R China;
Jilin Univ Coll Phys 2699 Qianjin St Changchun 130012 Jilin Peoples R China;
Jilin Univ Coll Phys 2699 Qianjin St Changchun 130012 Jilin Peoples R China;
Natl Acad Sci Ukraine V Lashkaryov Inst Semicond Phys 41 Nauky Ave UA-03028 Kiev Ukraine;
Natl Acad Sci Ukraine V Lashkaryov Inst Semicond Phys 41 Nauky Ave UA-03028 Kiev Ukraine;
Taras Shevchenko Natl Univ Kyiv 64 Volodymyrska UA-01033 Kiev Ukraine;
Silicon carbide films; PECVD; Coating materials; Optical properties; Mechanical properties;
机译:放电功率和硅含量对PECVD获得的富含碳无定形碳化硅膜的光学和力学性能的影响
机译:碳含量和等离子体功率对PECVD沉积氢化非晶碳化硅薄膜室温光致发光特性的影响
机译:氢化非晶碳化硅薄膜的RF-PECVD沉积和光学性质
机译:相对低氢气稀释对富含碳氢化非晶碳化硅膜性能的影响
机译:通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
机译:富碳碳化硅的机械和电子性能
机译:通过pECVD在晶体硅上沉积的超薄非晶硅膜的光学带隙